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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Indicates JEDEC Registered Data. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * High DC Current Gain -- hFE = 3500 (Typ) @ IC = 4 Adc * Collector-Emitter Sustaining Voltage -- @ 200 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6667 VCEO(sus) = 80 Vdc (Min) -- 2N6668 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * TO-220AB Compact Package * Complementary to 2N6387, 2N6388 . . . designed for general-purpose amplifier and low speed switching applications. Darlington Silicon Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS (1) REV 1 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TA = 25_C Derate above 25_C Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous -- Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage BASE Figure 1. Darlington Schematic Rating [ 8 k [ 120 Characteristic COLLECTOR EMITTER Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB Symbol RJC RJA 2N6667 60 60 - 65 to + 150 PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 - 80 VOLTS 65 WATTS 2 0.016 65 0.52 250 10 15 5 2N6667 2N6668 (See 2N3773) CASE 221A-06 TO-220AB Order this document by 2N6667/D 2N6609 62.5 1.92 Max 2N6668 80 80 mAdc Watts W/_C watts W/_C _C/W _C/W Unit Unit 3-1 Adc Vdc Vdc Vdc _C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6667 2N6668 Small-Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz) * Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS 3-2 PD, POWER DISSIPATION (WATTS) FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA tr, tf 10 ns DUTY CYCLE = 1.0% Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain -- Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Base-Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) DC Current Gain (IC = 5 Adc, VCE = 3 Vdc) (IC = 10 Adc, VCE = 3 Vdc) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) TA TC 4 80 1 3 v 60 [ [ v TC t, TIME ( s) 2 20 40 0 0 20 40 Figure 3. Power Derating TA 60 80 100 T, TEMPERATURE (C) Characteristic Figure 2. Switching Times Test Circuit v 120 V2 APPROX +8V V1 APPROX - 12 V 140 0 160 25 s 0.2 0.3 1 0.7 0.5 0.1 0.1 10 7 5 2 3 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 Motorola Bipolar Power Transistor Device Data 0.2 tr Figure 4. Typical Switching Times tf VCEO(sus) 51 0.3 hfe VCE(sat) VBE(sat) Symbol IC, COLLECTOR CURRENT (AMPS) ICEO IEBO ICEX |hfe| Cob hFE RB D1 0.5 0.7 + 4.0 V 1 1000 1000 100 Min 20 60 80 -- -- -- -- -- -- -- -- -- -- -- -- ts [ 8 k [ 120 2 TUT .td VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 20000 -- Max 200 300 300 3 3 2.8 4.5 -- -- -- -- 3 2 3 5 1 1 VCC - 30 V RC 5 SCOPE mAdc mAdc mAdc Adc Unit Vdc Vdc Vdc pF 7 -- -- -- 10 2N6667 2N6668 1 r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.01 0.1 0.05 0.02 0.01 0.02 0.05 SINGLE PULSE t1 P(pk) ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 500 1000 0.2 t2 DUTY CYCLE, D = t1/t2 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 Figure 5. Thermal Response 20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 TJ = 150C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 7 10 20 30 50 70 100 5 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 1 ms 5 ms 100 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Maximum Safe Operating Area 10,000 hFE , SMALL-SIGNAL CURENT GAIN 5000 2000 C, CAPACITANCE (pF) 1000 500 200 100 50 TC = 25C VCE = 4 VOLTS IC = 3 AMPS 300 TJ = 25C 200 Cib 100 70 50 Cob 20 10 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 30 0.1 0.2 1 2 5 10 20 0.5 VR, REVERSE VOLTAGE (VOLTS) 50 100 f, FREQUENCY (kHz) Figure 7. Typical Small-Signal Current Gain Figure 8. Typical Capacitance Motorola Bipolar Power Transistor Device Data 3-3 2N6667 2N6668 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 VCE = 3 V 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = - 55C 0.2 3 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMPS) 5 7 10 TJ = 150C 2.6 TJ = 25C 2.2 IC = 2 A 1.8 4A 6A TJ = 25C 1.4 1 0.6 0.3 0.5 0.7 1 2 3 57 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Typical DC Current Gain Figure 10. Typical Collector Saturation Region 3 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 0.2 0.3 VC for VCE(sat) VB for VBE *IC/IB hFE @ VCE 3 + 3.0 V 25C to 150C - 55C to 25C V, VOLTAGE (VOLTS) 2.5 2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMPS) 5 7 10 1.5 1 25C to 150C - 55C to 25C 0.5 0.7 1 2 3 5 7 10 0.5 0.1 IC, COLLECTOR CURRENT (AMP) Figure 11. Typical "On" Voltages Figure 12. Typical Temperature Coefficients 105 104 IC, COLLECTOR CURRENT ( A) 103 102 TJ = 150C 101 100 10- 1 + 0.6 100C 25C + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 - 1.2 - 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) REVERSE FORWARD VCE = 30 V Figure 13. Typical Collector Cut-Off Region 3-4 Motorola Bipolar Power Transistor Device Data 2N6667 2N6668 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 3-5 2N6667 2N6668 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 3-6 Motorola Bipolar Power Transistor Device Data *2N6667/D* 2N6667/D |
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